Influence of HF etching time and concentration on si wafer in the mixture solution of HF/HNO‚/CH‚ COOH

Chan Kok Sheng, . and Razita Aarif, . and Engku Abd Ghapur Engku Ali, . and Mohd Faiz Hassan, . Influence of HF etching time and concentration on si wafer in the mixture solution of HF/HNO‚/CH‚ COOH. pp. 6-11. ISSN 2672-7226

Production of new semiconductor silicon (Si) wafer at the desired thickness for thinner microelectronic packaging not only requires high cost and energy but also causes the environmental pollution problem. However this issue can be simply solved by using the one-step chemical etching to produce the Si chip at the desired thickness for suitable packaging. In this study the effect of etching time on Si wafer in the HF/HNO‚/CH‚ COOH mixture solution has been carried out by varying the HF etchant concentration using the isotropic wet chemical etching method. The etching time studied is from 5 minutes to 30 minutes and the HF etchant concentration is in the range of (20-24) wt. From the results the variation of weight loss and depth etched is monotonically increased at prolonged etching duration. The etch rate was then determined from the variation of weight loss and depth etched against time. The results show that the etch rate of Si wafers decreases with time and increases at higher HF concentration. The surface of the Si wafer becomes smoothly polished after the etching as observed under the optical microscope. The X-ray diffractogram indicates that the crystalline peak intensity of the etched Si is higher than the pure one and the peaks related to Si shifts slightly to lower 2 as the HF concentration increases. The present finding indicates that the desired thickness of chemically etched Si wafer can be potentially fitted in a thinner packaging for microelectronic devices fabrication and hence reduces the energy and cost wasting for future sustainability.

Full text available from: Official URL: http://jssm.umt.edu.my/wp-content/uploads/sites/51...

Abstract

Production of new semiconductor silicon (Si) wafer at the desired thickness for thinner microelectronic packaging not only requires high cost and energy but also causes the environmental pollution problem. However this issue can be simply solved by using the one-step chemical etching to produce the Si chip at the desired thickness for suitable packaging. In this study the effect of etching time on Si wafer in the HF/HNO‚/CH‚ COOH mixture solution has been carried out by varying the HF etchant concentration using the isotropic wet chemical etching method. The etching time studied is from 5 minutes to 30 minutes and the HF etchant concentration is in the range of (20-24) wt. From the results the variation of weight loss and depth etched is monotonically increased at prolonged etching duration. The etch rate was then determined from the variation of weight loss and depth etched against time. The results show that the etch rate of Si wafers decreases with time and increases at higher HF concentration. The surface of the Si wafer becomes smoothly polished after the etching as observed under the optical microscope. The X-ray diffractogram indicates that the crystalline peak intensity of the etched Si is higher than the pure one and the peaks related to Si shifts slightly to lower 2 as the HF concentration increases. The present finding indicates that the desired thickness of chemically etched Si wafer can be potentially fitted in a thinner packaging for microelectronic devices fabrication and hence reduces the energy and cost wasting for future sustainability.

[error in script]

Item Type:	Article
AGROVOC Term:	Energy
AGROVOC Term:	Costs
AGROVOC Term:	Environmental pollution
AGROVOC Term:	Nitric acid
AGROVOC Term:	Acetic acid
AGROVOC Term:	Chemicals
AGROVOC Term:	Sampling
AGROVOC Term:	Data analysis
AGROVOC Term:	morphology
AGROVOC Term:	Energy saving
Depositing User:	Mr. AFANDI ABDUL MALEK
Last Modified:	24 Apr 2025 00:54
URI:	http://webagris.upm.edu.my/id/eprint/9044

Actions (login required)

View Item